Breakthrough in Research on "High Density Storage and Key Technologies of Magnetic Electronic Materials"

【Research and Development of China Instrument Network Instrumentation】 Resistive memory, phase change memory, magnetic memory, high-sensitivity magnetic sensor and isolated coupling device are new types of storage and magnetic electronics technology with good application prospects in mobile communications, personal computers, and digital cameras. Electronic labels and other fields have broad market value.

(Image from the Internet, invaded)

During the "12th Five-Year Plan" period, the new material technology field of the 863 Plan supported the "High Density Storage and Key Technologies of Magnetic Electronic Materials" theme project. Recently, the High-tech Division of the Ministry of Science and Technology organized an expert review of the subject project in Beijing.

The project has developed a CMOS process compatible resistive and electrode material combination system research and development of TaOx resistive memory; chip manufacturing is based on 8 inch 0.13μm standard logic production line of SMIC IC manufacturing, chip-level reading The time reaches ten nanoseconds, the write voltage meets the 0.13μm or 0.11μm technology standard logic process IO withstand voltage; a new type of superlattice phase change material with low thermal conductivity is developed, and the phase transition of the asymmetric ring-shaped microelectrode structure is developed. Memory cells, phase change memory arrays were prepared; magnetic tunnel junctions and other magnetic materials were studied, magnetic sensor prototypes based on magnetic tunnel junctions were prepared, and magnetic-electronic material-based non-volatile latching was completed. Two-core and three-core two-channel data isolation coupling interface chip. The implementation of this project has broken through the key technologies of advanced high-density storage and magnetic electronic material devices, cultivated a high-level information storage and magnetic electronic device R&D team, and has a supportive role for the development of China's new electronic material technology and information industry.

During the “Thirteenth Five-Year Plan” period, in order to further promote the scientific and technological innovation and industrialization development in the field of materials in China, the Ministry of Science and Technology formulated the “Special Plan for Scientific and Technological Innovation in the “Thirteenth Five-Year Plan” Material Field” and listed “Strategic Advanced Electronic Materials” as development. One of the key points, focusing on the research and development of third-generation semiconductor and microelectronics materials, focusing on addressing the major common problems faced by the semiconductor and microelectronics industries, and the formation of core semiconductor materials, the optimization of production process flow, and the development of key technologies. Breakthrough, and strive to promote the integration of cross-border technology, and seize the commanding heights of advanced electronic materials technology.

(Original Title: "High Density Storage and Key Technologies of Magnetic Electronic Materials" Get a Breakthrough)